Beirut ElectroCity
Mosfet Transistor IRF1404
Part no. 10320129
- Pick up in Msaitbeh, Beirut
- Delivery across Lebanon
- Bulk and education pricing on request
Description
The Mosfet Transistor IRF1404 is an N-channel HEXFET power MOSFET in a TO-220 package, rated 40 V with an on-resistance of only 4 mΩ. That very low resistance keeps losses and heat down when switching large currents, so it is widely used in motor controllers, power inverters, battery systems and DC-DC converters running from 12 V.
Mosfet Transistor IRF1404 Specifications
- Type: N-channel enhancement-mode power MOSFET
- Drain-source voltage (VDSS): 40 V
- Continuous drain current (ID): 162 A at 25 °C case temperature (silicon rating; the TO-220 package limits continuous current to 75 A)
- On-resistance (RDS(on)): 4 mΩ max at VGS = 10 V
- Gate-source voltage (VGS): ±20 V max
- Gate threshold voltage: 2 V to 4 V
- Power dissipation: 200 W at 25 °C case temperature
- Package: TO-220AB, pins gate, drain, source (front view, left to right); the metal tab is the drain
Mosfet Transistor IRF1404 Applications
- Brushed DC motor controllers and H-bridges
- 12 V power inverters and UPS circuits
- Battery management and reverse polarity protection
- Synchronous DC-DC converters
- High-current low-side switching of heaters and lamps
What's in the Box
- 1 × IRF1404 N-channel MOSFET
Tip: The IRF1404 needs about 10 V on the gate to reach its rated 4 mΩ, so drive it from a gate driver or a transistor stage rather than directly from a 5 V or 3.3 V pin. Its large gate charge also means a dedicated driver gives faster, cooler switching at PWM frequencies.
Shipping & pickup
Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.