Beirut ElectroCity

Mosfet Transistor IRF1404

Part no. 10320129

$1.50
In stock
  • Pick up in Msaitbeh, Beirut
  • Delivery across Lebanon
  • Bulk and education pricing on request
Description

The Mosfet Transistor IRF1404 is an N-channel HEXFET power MOSFET in a TO-220 package, rated 40 V with an on-resistance of only 4 mΩ. That very low resistance keeps losses and heat down when switching large currents, so it is widely used in motor controllers, power inverters, battery systems and DC-DC converters running from 12 V.

Mosfet Transistor IRF1404 Specifications

  • Type: N-channel enhancement-mode power MOSFET
  • Drain-source voltage (VDSS): 40 V
  • Continuous drain current (ID): 162 A at 25 °C case temperature (silicon rating; the TO-220 package limits continuous current to 75 A)
  • On-resistance (RDS(on)): 4 mΩ max at VGS = 10 V
  • Gate-source voltage (VGS): ±20 V max
  • Gate threshold voltage: 2 V to 4 V
  • Power dissipation: 200 W at 25 °C case temperature
  • Package: TO-220AB, pins gate, drain, source (front view, left to right); the metal tab is the drain

Mosfet Transistor IRF1404 Applications

  • Brushed DC motor controllers and H-bridges
  • 12 V power inverters and UPS circuits
  • Battery management and reverse polarity protection
  • Synchronous DC-DC converters
  • High-current low-side switching of heaters and lamps

What's in the Box

  • 1 × IRF1404 N-channel MOSFET

Tip: The IRF1404 needs about 10 V on the gate to reach its rated 4 mΩ, so drive it from a gate driver or a transistor stage rather than directly from a 5 V or 3.3 V pin. Its large gate charge also means a dedicated driver gives faster, cooler switching at PWM frequencies.

Shipping & pickup

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.