Mosfet Transistor IRF1010N

The Mosfet Transistor IRF1010N is an N-channel HEXFET power MOSFET in a TO-220 package, rated 55 V with a very low on-resistance of 11 mΩ. Its high current rating makes it a strong choice for switching heavy loads in 12 V and 24 V systems, including DC motors, inverters, battery systems and DC-DC converters.

Mosfet Transistor IRF1010N Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDSS): 55 V
• Continuous drain current (ID): 85 A at 25 °C case temperature (75 A package limit), with a suitable heat sink
• On-resistance (RDS(on)): 11 mΩ max at VGS = 10 V
• Gate-source voltage (VGS): ±20 V max
• Gate threshold voltage: 2 V to 4 V
• Power dissipation: 180 W at 25 °C case temperature
• Package: TO-220AB, pins gate, drain, source (front view, left to right); the metal tab is the drain

Mosfet Transistor IRF1010N Applications

• DC motor speed controllers and H-bridge drivers
• Low-side switches for 12 V and 24 V loads such as lamps, heaters and solenoids
• DC-DC converters and power inverters
• Battery management and electric vehicle projects
• Solar charge controllers

What's in the Box

• 1 × IRF1010N N-channel MOSFET

Tip: The IRF1010N is not a logic-level MOSFET: it needs about 10 V on the gate to reach its low on-resistance, so from a 5 V or 3.3 V microcontroller use a gate driver or a transistor stage. Add a 10 kΩ resistor from gate to source so it stays off when the input is floating.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.