Mosfet Transistor IRF5210

The Mosfet Transistor IRF5210 is a P-channel power MOSFET in a TO-220 package, rated for -100 V and -40 A with a low on-resistance of 60 mΩ. It is one of the stronger P-channel parts in TO-220, which makes it a good high-side switch for 12 V, 24 V and 48 V systems, battery disconnect and reverse-polarity protection circuits, and H-bridge motor drivers.

Mosfet Transistor IRF5210 Specifications

• Type: P-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): -100 V
• Continuous drain current: -40 A at 25 °C case temperature, with a suitable heatsink
• On-resistance (RDS(on)): 0.06 Ω (60 mΩ) maximum at VGS = -10 V
• Gate-source voltage: ±20 V maximum
• Package and pinout: TO-220; gate, drain, source from left to right facing the front; the metal tab is the drain

Mosfet Transistor IRF5210 Applications

• High-side load switches for 12 V, 24 V and 48 V systems
• Reverse-polarity and battery disconnect protection
• High side of H-bridge motor drivers
• Solar charge controllers and power distribution boards

What's in the Box

• 1 × IRF5210 P-channel MOSFET

Tip: Connect the source to the positive supply and the load to the drain. Pull the gate about 10 V below the source to turn it on, keeping the gate-source voltage within ±20 V, and use a pull-up resistor from gate to source so it stays off by default. On 24 V and higher supplies, add a Zener diode to clamp the gate voltage.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.