Mosfet Transistor IRF630

The Mosfet Transistor IRF630 is an N-channel power MOSFET in a TO-220 package, rated for 200 V and 9 A with an on-resistance of 0.4 Ω. Its 200 V rating makes it a common choice for switch-mode power supplies, inverters, audio amplifier output stages and motor control circuits that run at higher voltages than typical logic-level MOSFETs can handle.

Mosfet Transistor IRF630 Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): 200 V
• Continuous drain current: 9 A at 25 °C case temperature, with a suitable heatsink
• On-resistance (RDS(on)): 0.40 Ω maximum at VGS = 10 V
• Gate threshold voltage: 2–4 V
• Gate-source voltage: ±20 V maximum
• Package and pinout: TO-220; gate, drain, source from left to right facing the front; the metal tab is the drain

Mosfet Transistor IRF630 Applications

• Switch-mode power supplies and DC-DC converters
• Inverter and UPS power stages
• MOSFET audio amplifier output stages
• Motor control and high-voltage switching
• Replacement part in TV, amplifier and power boards

What's in the Box

• 1 × IRF630 N-channel MOSFET

Tip: The IRF630 needs about 10 V on the gate to turn fully on, so drive it from a gate driver rather than directly from a 5 V microcontroller pin. Add a 10 kΩ pull-down from gate to source, and mount it on a heatsink when it switches more than a few amps.

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