Mosfet Transistor IRF730

The Mosfet Transistor IRF730 is a high-voltage N-channel power MOSFET in a TO-220 package, rated for 400 V and 5.5 A with an on-resistance of 1.0 Ω. Its voltage rating suits circuits that run from rectified 220–230 V mains, such as off-line switch-mode power supplies, flyback converters, electronic ballasts and inverters, and it is a common replacement part in power supply repairs.

Mosfet Transistor IRF730 Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): 400 V
• Continuous drain current (ID): 5.5 A at 25 °C case temperature
• On-resistance (RDS(on)): 1.0 Ω maximum at VGS = 10 V
• Gate threshold voltage: 2 V to 4 V
• Gate-source voltage: ±20 V maximum
• Power dissipation: 74 W at 25 °C case temperature
• Package: TO-220AB, pins gate, drain, source (front view, left to right); the metal tab is the drain

Mosfet Transistor IRF730 Applications

• Off-line switch-mode power supplies
• Flyback and forward converters
• Electronic ballasts and lighting drivers
• Half-bridge inverters and high-voltage switching
• Replacement part when repairing power supplies

What's in the Box

• 1 × IRF730 N-channel MOSFET

Tip: Drive the gate with about 10 V for full turn-on; a 5 V microcontroller pin is not enough, so use a PWM controller or gate driver IC. Circuits at mains voltage are dangerous: insulate the tab from the heatsink where needed and work on the board only with the power disconnected and the capacitors discharged.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.