Mosfet Transistor IRF820

The Mosfet Transistor IRF820 is a high-voltage N-channel power MOSFET rated for 500 V and 2.5 A, in a TO-220 package. Its high voltage rating suits it to low-power circuits that run directly from rectified mains, such as small switch-mode power supplies, flyback converters, chargers and lighting ballasts, where switching voltage matters more than current.

Mosfet Transistor IRF820 Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): 500 V
• Continuous drain current: 2.5 A at 25 °C case temperature
• On-resistance (RDS(on)): 3.0 Ω maximum at VGS = 10 V
• Power dissipation: 50 W with the case at 25 °C
• Gate-source voltage: ±20 V maximum
• Package and pinout: TO-220; gate, drain, source from left to right facing the front; the metal tab is the drain

Mosfet Transistor IRF820 Applications

• Low-power offline switch-mode power supplies
• Flyback converters and chargers
• Lighting ballasts and LED drivers
• Replacement part in mains-powered boards

What's in the Box

• 1 × IRF820 N-channel MOSFET

Tip: With an on-resistance of 3 Ω, the IRF820 is meant for high voltages at low currents, not for switching large DC loads at 12 V. The tab is the drain and may sit at mains voltage, so insulate it from the heatsink and never work on the circuit while it is plugged in.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.