Mosfet Transistor IRF830

The Mosfet Transistor IRF830 is an N-channel power MOSFET rated for 500 V drain-source voltage and 4.5 A continuous drain current. Its high voltage rating suits mains-powered circuits such as switch-mode power supplies, inverters and electronic ballasts, and it is a common replacement part in power supply repairs. The TO-220 package mounts easily on a heatsink.

Mosfet Transistor IRF830 Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): 500 V
• Drain current (ID): 4.5 A continuous with the case at 25 °C
• On-resistance (RDS(on)): 1.5 Ω maximum at VGS = 10 V
• Gate threshold voltage: 2–4 V
• Gate-source voltage: ±20 V maximum
• Power dissipation: 74 W with the case at 25 °C
• Package: TO-220, pins gate, drain, source (tab = drain)

Mosfet Transistor IRF830 Applications

• Primary-side switch in switch-mode power supplies
• Inverters and flyback converters
• High-voltage DC load switching
• Replacement part for TV, monitor and power supply repairs

What's in the Box

• 1 × IRF830 N-channel MOSFET

Tip: The IRF830 is not a logic-level MOSFET: it needs about 10 V on the gate to switch fully on, so drive it from an Arduino through a gate driver or a transistor stage. Treat any circuit working near mains or 500 V as dangerous and keep it insulated.

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