Beirut ElectroCity
Mosfet Transistor IRF9520
Part no. 10320082
- Pick up in Msaitbeh, Beirut
- Delivery across Lebanon
- Bulk and education pricing on request
Description
The Mosfet Transistor IRF9520 is a P-channel power MOSFET in a TO-220 package, rated −100 V and −6.8 A with an on-resistance of 0.6 Ω. As a P-channel device it switches the positive side of a supply, so the load can stay connected to ground, and it pairs with N-channel parts such as the IRF520 in complementary output stages and H-bridges.
Mosfet Transistor IRF9520 Specifications
- Type: P-channel enhancement-mode power MOSFET
- Drain-source voltage (VDS): −100 V
- Continuous drain current (ID): −6.8 A at 25 °C case temperature
- On-resistance (RDS(on)): 0.6 Ω max at VGS = −10 V
- Gate-source voltage (VGS): ±20 V max
- Gate threshold voltage: −2 V to −4 V
- Power dissipation: 60 W at 25 °C case temperature
- Package: TO-220AB, pins gate, drain, source (front view, left to right); the metal tab is the drain
Mosfet Transistor IRF9520 Applications
- High-side load switches for 12 V to 48 V systems
- Complementary audio amplifier stages with the IRF520
- Upper switches in H-bridge motor drivers
- Power path switching and reverse polarity protection
What's in the Box
- 1 × IRF9520 P-channel MOSFET
Tip: Connect the source to the positive supply and the load to the drain. The MOSFET turns on when the gate is pulled about 10 V below the source, so from a microcontroller use an NPN transistor to pull the gate low, with a resistor from gate to source to turn it off. On supplies above 20 V, add a zener diode to keep VGS within ±20 V.
Shipping & pickup
Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.