IRF9630

The IRF9630 is a P-channel power MOSFET in a TO-220AB package, rated for −200 V and −6.5 A. Its high voltage rating suits high-side switching on higher-voltage DC rails, audio amplifier output stages and complementary designs where it pairs with the N-channel IRF630.

IRF9630 Specifications

• Type: P-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): −200 V
• Continuous drain current: −6.5 A with the case at 25 °C
• On-resistance (RDS(on)): 0.80 Ω maximum at VGS = −10 V
• Gate threshold voltage: −2 V to −4 V
• Gate-source voltage: ±20 V maximum
• Power dissipation: 74 W at 25 °C case temperature
• Package and pinout: TO-220AB, pins gate, drain, source (G-D-S); the tab is the drain
• N-channel complement: IRF630

IRF9630 Applications

• High-side switching of loads on higher-voltage DC rails
• Complementary output stages in audio amplifiers together with the IRF630
• Half-bridge and H-bridge circuits
• Reverse-polarity protection on DC inputs
• Replacement part when repairing amplifiers and power supplies

What's in the Box

• 1 × IRF9630 P-channel MOSFET

Tip: Connect the source to the positive supply and the load to the drain. The MOSFET turns fully on when the gate is pulled about 10 V below the source, so drive it through an NPN transistor with a pull-up resistor from gate to source, and add a 12–15 V zener from gate to source when the supply is above 20 V to keep VGS within ±20 V.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.