Mosfet Transistor IRFD120

The Mosfet Transistor IRFD120 is an N-channel power MOSFET rated for 100 V and 1.3 A, in a compact 4-pin DIP (HEXDIP) package. The DIP body plugs straight into breadboards, perfboards and IC sockets, so it is a handy MOSFET for prototyping, for driving small motors, relays, LEDs and solenoids, and for low-power switching on through-hole boards.

Mosfet Transistor IRFD120 Specifications

• Type: N-channel enhancement-mode power MOSFET
• Drain-source voltage (VDS): 100 V
• Continuous drain current: 1.3 A at 25 °C
• On-resistance (RDS(on)): 0.27 Ω maximum at VGS = 10 V
• Power dissipation: 1.3 W
• Gate-source voltage: ±20 V maximum
• Package: 4-pin DIP (HEXDIP), through-hole

Mosfet Transistor IRFD120 Applications

• Low-side switching of relays, small DC motors and LEDs
• Breadboard prototyping and student projects
• Driver stages for larger MOSFETs and transistors
• Replacement part in power and control boards

What's in the Box

• 1 × IRFD120 N-channel MOSFET

Tip: The IRFD120 turns fully on with about 10 V on the gate; from a 5 V Arduino pin keep the load current small or use a gate driver. Check the pinout in the datasheet before wiring, because the 4-pin DIP layout is different from TO-220 MOSFETs, and add a flyback diode across coils and motors.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.