Mosfet Transistor IRFP260N

The Mosfet Transistor IRFP260N is a high-power N-channel MOSFET rated for 200 V and 50 A, with a low on-resistance of 0.04 Ω. Its large TO-247 package can handle a lot of heat when mounted on a heatsink, so it is widely used in inverters, switch-mode power supplies, motor drives and other high-current designs.

Mosfet Transistor IRFP260N Specifications

• Type: N-channel enhancement power MOSFET
• Drain-source voltage (VDS): 200 V
• Continuous drain current (ID): 50 A at 25 °C case
• On-resistance RDS(on): 0.04 Ω max at VGS = 10 V
• Gate-source voltage: ±20 V max
• Power dissipation: 300 W at 25 °C case
• Package: TO-247AC, pins gate, drain, source

Mosfet Transistor IRFP260N Applications

• DC-to-AC inverters and UPS systems
• Switch-mode power supplies
• High-current motor drivers and controllers
• ZVS induction heaters and high-power DIY projects
• Electronic loads and power electronics labs

What's in the Box

• 1 × IRFP260N N-channel MOSFET

Tip: The metal tab is connected to the drain, so use an insulating pad and washer when several MOSFETs share one heatsink. Drive the gate with 10 V to 12 V, ideally from a gate driver IC, because this is not a logic-level MOSFET.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.