SILICON POWER TRANSISTOR 2SB1133

The Silicon Power Transistor 2SB1133 is a PNP power transistor rated for −60 V and −3 A, in an insulated TO-220ML package. It is made for low-frequency general-purpose amplifiers and is often used in audio output stages and as a replacement part when repairing amplifiers and power supplies. Its NPN complement is the 2SD1666.

Silicon Power Transistor 2SB1133 Specifications

• Polarity: PNP, silicon
• Collector-base voltage (VCBO): −60 V
• Collector-emitter voltage (VCEO): −60 V
• Collector current (IC): −3 A continuous, −8 A pulse
• Power dissipation: 2 W in free air, 25 W at a case temperature of 25 °C
• DC gain (hFE): 70 to 280 at −0.5 A
• Package: TO-220ML (insulated), pins 1 base, 2 collector, 3 emitter
• Complement: 2SD1666 (NPN)

Silicon Power Transistor 2SB1133 Applications

• Audio amplifier output and driver stages
• Complementary push-pull stages with the 2SD1666
• Switching relays, lamps and small motors on the positive side
• Pass transistor in linear power supplies
• Repairing amplifiers and power boards

What's in the Box

• 1 × 2SB1133 PNP power transistor

Tip: As a PNP device, the 2SB1133 switches the positive side of a load: the emitter goes to the positive supply and the base is pulled below the emitter to turn it on. Fit a heatsink when it dissipates more than about 2 W, and check the B-C-E pinout before soldering.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.