Transistor BS170 MOS-N-FET 60V 0.3A

The Transistor BS170 MOS-N-FET is an N-channel enhancement-mode MOSFET in a TO-92 package, rated 60 V and 0.3 A. It switches small loads such as LEDs, small relays and buzzers from a microcontroller pin, and it is a common choice for simple logic level shifters and low-current signal switching.

Transistor BS170 MOS-N-FET Specifications

• Type: N-channel enhancement-mode MOSFET
• Drain-source voltage: 60 V
• Drain current: 0.3 A
• Gate threshold voltage: 0.8–3 V
• On-resistance: 5 Ω maximum at VGS = 10 V
• Gate-source voltage: ±20 V maximum
• Package: TO-92, pinout drain, gate, source

Transistor BS170 MOS-N-FET Applications

• Switching LEDs, small relays and buzzers from Arduino or ESP32 pins
• Bidirectional logic level shifting between 3.3 V and 5 V, such as I2C lines
• Low-current signal and analog switching
• Electronics education and prototyping

What's in the Box

• 1 × BS170 N-channel MOSFET

Tip: Add a 100 kΩ resistor from gate to source so the MOSFET stays off when the pin floats. With a 3.3 V gate drive the BS170 may not turn fully on, so keep the load current low or drive the gate with 5 V or more. Fit a flyback diode across relay coils.

Orders placed before 14:00 are ready for pickup the same day. Delivery across Lebanon usually takes 1–3 working days.